PHOTOLUMINESCENCE IN HEAVILY DOPED SI AND GE

被引：5

作者：

WAGNER, J ^{[1
]}

COMPAAN, A ^{[1
]}

AXMANN, A ^{[1
]}

机构：

[1] FRAUNHOFER INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983508

中图分类号：

学科分类号：

摘要：

引用

页码：61 / 64

页数：4

共 7 条

[1] PHONON SOFTENING IN ULTRA HEAVILY DOPED SI AND GE [J].

COMPAAN, A ;

CONTRERAS, G ;

CARDONA, M ;

AXMANN, A .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :197-201

[2]

LAGUILLAUME CBA, 1968, PHYS STAT SOL, V35, P599

[3] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J].

MAHAN, GD .

[4] ORIGIN OF PHOTO-LUMINESCENCE IN HEAVILY DOPED SILICON [J].

PARSONS, RR .

[5] PHOTO-LUMINESCENCE IN HEAVILY DOPED SI-B AND SI-AS [J].

SCHMID, PE ;

THEWALT, MLW ;

DUMKE, WP .

VANDRIEL, HM ;

ELCI, A ;

BESSEY, JS ;

SCULLY, MO .

[7]

White C. W., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P59