1.5-MU-M MULTIPLE-QUANTUM-WELL DISTRIBUTED FEEDBACK LASER-DIODES GROWN ON CORRUGATED INP BY MOVPE

被引：20

作者：

KITAMURA, M ^{[1
]}

TAKANO, S ^{[1
]}

SASAKI, T ^{[1
]}

HENMI, N ^{[1
]}

YAMADA, H ^{[1
]}

SHINOHARA, Y ^{[1
]}

HASUMI, H ^{[1
]}

MITO, I ^{[1
]}

机构：

[1] NEC CORP,DIV SEMICOND DEVICE,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 16期

关键词：

D O I：

10.1049/el:19880711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasers, Semiconductor

引用

收藏

页码：1045 / 1046

页数：2

相关论文

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[8] LOW THRESHOLD OPERATION OF 1.55-MU-M GAINASP-INP DFB-BH LDS ENTIRELY GROWN BY MOVPE ON INP GRATINGS
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