MASS SPECTROSCOPIC STUDY OF PHOTOLYTIC DECOMPOSITION OF TRIETHYLGALLIUM AND ARSINE

被引：14

作者：

NORTON, DP

AJMERA, PK

机构：

[1] Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge

来源：

MATERIALS LETTERS | 1990年 / 9卷 / 09期

关键词：

Arsenic Compounds--Photolysis - Gallium Compounds--Photolysis - Mass Spectrometers--Applications;

D O I：

10.1016/0167-577X(90)90170-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mass spectrometry has been utilized to study the photolytic decomposition of triethylgallium and arsine leading to the deposition of GaAs thin films. A Hg-Xe arc lamp is utilized as the light source. We find that the products of photodissociation are essentially the same as those found previously for pyrolytic decomposition. We also find that while thin gallium films photodeposited from triethylgallium contain high amounts of carbon, GaAs thin films photodeposited from triethylgallium and arsine do not contain significant carbon concentrations. © 1990.

引用

页码：321 / 324

页数：4

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