LONG-WAVELENGTH INFRARED PHOTOINDUCED SWITCHING OF A RESONANT TUNNELING DIODE USING THE INTERSUBBAND TRANSITION

被引：7

作者：

LIU, HC

STEELE, AG

BUCHANAN, M

WASILEWSKI, ZR

机构：

[1] Institute for Microstructural Sciences, National Research Council, Ottawa, Ont.

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 07期

关键词：

D O I：

10.1109/55.192756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states, we have observed voltage switching induced by long-wavelength infrared light from a CO2 laser. We propose and discuss possible optoelectronic and all-optical switching applications.

引用

收藏

页码：363 / 365

页数：3

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