HIGH PULSED MAGNETIC FIELD MICROWAVE FARADAY ROTATION IN N-TYPE GERMANIUM + SILICON

被引：5

作者：

BRODWIN, ME

BURGESS, TJ

机构：

来源：

关键词：

D O I：

10.1063/1.1723598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：224 / &

共 7 条

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[3] DEPENDENCE OF FREE-CARRIER FARADAY ELLIPTICITY IN SEMICONDUCTORS ON SCATTERING MECHANISMS
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[4] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
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[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1995 - 2003
[5] KOLM, 1962, HIGH MAGNETIC FIELDS, P249
[6] FARADAY EFFECT IN GERMANIUM AT ROOM TEMPERATURE
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[7] SMITH RA, 1961, SEMICONDUCTORS+, P347