ENTROPY MEASUREMENTS ON SLOW SI/SIO2 INTERFACE STATES

被引：19

作者：

COBDEN, DH ^{[1
]}

UREN, MJ ^{[1
]}

KIRTON, MJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using telegraph noise measurements on small n- and p-channel metal-oxide-silicon field-effect transistors, we have measured the entropy change associated with the change of the charge state of individual slow Si/SiO2 surface states. In n-channel devices we find that the entropy change is positive on electron emission to the silicon conduction band, while in p-channel devices it is positive on hole emission to the valence band. The results suggest that the slow states in the upper and lower regions of the silicon band gap are of a different type.

引用

页码：1245 / 1247

页数：3

共 18 条

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