CHARACTERIZATION OF THERMALLY NITRIDED SIO2 USING AUGER SPUTTER PROFILING

被引：1

作者：

HAN, CJ ^{[1
]}

MOSLEHI, MM ^{[1
]}

HELMS, CR ^{[1
]}

SARASWAT, KC ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573314

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：804 / 805

页数：2

共 13 条

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[5] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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[7]

HAYAFUJI Y, 1982, J APPL PHYS, V53, P8639, DOI 10.1063/1.330460

[8] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

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[10]

MOSLEHI M, 1983, P S SILICON NITRIDE, P324

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