DAMAGE ACCUMULATION IN HYDROGEN-IMPLANTED SILICON

被引：7

作者：

HALL, BO

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(86)90010-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：177 / 182

页数：6

共 7 条

CHOYKE, WJ ;

IRWIN, RB ;

MCGRUER, JN ;

TOWNSEND, JR ;

DOYLE, NJ ;

HALL, BO ;

SPITZNAGEL, JA ;

WOOD, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :407-412

[2]

CHOYKE WJ, 1984, 13TH P INT C DEF SEM, P789

[3] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J].

MANNING, I ;

MUELLER, GP .

STEIN, HJ ;

PEERCY, PS .

[5] BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON [J].

STEIN, HJ .

[6] VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICON [J].

STEIN, HJ .

[7]

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