NEW RESULTS WITH SEMICONDUCTOR DRIFT CHAMBERS FOR X-RAY SPECTROSCOPY

被引：11

作者：

JALAS, P

NIEMELA, A

CHEN, W

REHAK, P

CASTOLDI, A

LONGONI, A

机构：

[1] BROOKHAVEN NATL LAB, UPTON, NY 11973 USA

[2] POLITECN MILAN, I-20133 MILAN, ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/23.322856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon Drift Detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30-degrees-C, and as function of active area. Also the effects influencing the peak to background ratio have been outlined.

引用

页码：1048 / 1053

页数：6

共 10 条

[1] HIGH-RESOLUTION X-RAY SPECTROSCOPY WITH SILICON DRIFT DETECTORS AND INTEGRATED ELECTRONICS [J].

BERTUCCIO, G ;

SAMPIETRO, M ;

FAZZI, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (03) :538-542

[2]

BRAUNINGER H, 1990, P SOC PHOTO-OPT INS, V1344, P404

[3] SEMICONDUCTOR DRIFT CHAMBER - AN APPLICATION OF A NOVEL CHARGE TRANSPORT SCHEME [J].

GATTI, E ;

REHAK, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03) :608-614

[4] SUBOPTIMAL FILTERING OF 1/F-NOISE IN DETECTOR CHARGE MEASUREMENTS [J].

GATTI, E ;

MANFREDI, PF ;

SAMPIETRO, M ;

SPEZIALI, V .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 297 (03) :467-478

[5]

GATTI E, 1983, LBL15973UC37, P97

[6]

NIEMELA A, 1993, IEEE NSS93 C SAN FRA

[7] THE PN-CCD ON-CHIP ELECTRONICS [J].

PINOTTI, E ;

BRAUNINGER, H ;

FINDEIS, N ;

GORKE, H ;

HAUFF, D ;

HOLL, P ;

KEMMER, J ;

LECHNER, P ;

LUTZ, G ;

KINK, W ;

MEIDINGER, N ;

METZNER, G ;

PREDEHL, P ;

REPPIN, C ;

STRUDER, L ;

TRUMPER, J ;

VONZANTHIER, C ;

KENDZIORRA, E ;

STAUBERT, R ;

RADEKA, V ;

REHAK, P ;

BERTUCCIO, G ;

GATTI, E ;

LONGONI, A ;

PULLIA, A ;

SAMPIETRO, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :85-91

[8] IMPLANTED SILICON JFET ON COMPLETELY DEPLETED HIGH-RESISTIVITY DEVICES [J].

RADEKA, V ;

REHAK, P ;

RESCIA, S ;

GATTI, E ;

LONGONI, A ;

SAMPIETRO, M ;

BERTUCCIO, G ;

HOLL, P ;

STRUDER, L ;

KEMMER, J .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :91-94

[9] PROGRESS IN SEMICONDUCTOR DRIFT DETECTORS [J].

REHAK, P ;

WALTON, J ;

GATTI, E ;

LONGONI, A ;

SANPIETRO, M ;

KEMMER, J ;

DIETL, H ;

HOLL, P ;

KLANNER, R ;

LUTZ, G ;

WYLIE, A ;

BECKER, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 248 (2-3) :367-378

[10] APPLICATION OF THE RAPID THERMAL-PROCESS - SINTERING THE SPUTTERED ALUMINUM SILICON CONTACT IN SILICON DETECTOR FABRICATION [J].

WEI, C ;

ZHENG, L ;

KRANER, HW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (04) :558-562

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