共 18 条
- [1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890BONNEFOI, ARCHOW, DHMCGILL, TC
- [2] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1545 - 1547BROEKAERT, TPELEE, WFONSTAD, CG
- [3] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368CAPASSO, FKIEHL, RA
- [4] TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2693 - 2695GOLDMAN, VJTSUI, DCCUNNINGHAM, JETSANG, WT
- [5] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088GOODHUE, WDSOLLNER, TCLGLE, HQBROWN, ERVOJAK, BA
- [6] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3792 - 3797HASE, IKAWAI, HKANEKO, KWATANABE, N
- [7] REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L302 - L305HAYAKAWA, TKONDO, MSUYAMA, TTAKAHASHI, KYAMAMOTO, SHIJIKATA, T
- [8] ORIENTATION DEPENDENCE OF VALENCE-SUBBAND STRUCTURES IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4609 - 4613HOUNG, MPCHANG, YCWANG, WI
- [9] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123HUANG, CIPAULUS, MJBOZADA, CADUDLEY, SCEVANS, KRSTUTZ, CEJONES, RLCHENEY, ME
- [10] INGAAS/INALAS BISTABLE MULTIPLE QUANTUM WELL LASERS WITH LARGE ON-OFF RATIO USING THE RESONANT TUNNELING EFFECT[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1462 - 1464KAWAMURA, YWAKITA, KMIKAMI, O