LONG-WAVELENGTH PTSI INFRARED DETECTORS FABRICATED BY INCORPORATING A P+ DOPING SPIKE GROWN BY MOLECULAR-BEAM EPITAXY

被引：34

作者：

LIN, TL

PARK, JS

GEORGE, T

JONES, EW

FATHAUER, RW

MASERJIAN, J

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450-degrees-C using elemental boron as the dopant source, with doping concentrations ranging from 5 X 10(19) to 2 X 10(20) cm-3. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

引用

页码：3318 / 3320

页数：3

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