LOW BARRIER HEIGHT SCHOTTKY MIXER DIODE USING SUPER THIN SILICON FILMS BY MOLECULAR-BEAM EPITAXY

被引:10
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BALLAMY, WC
OTA, Y
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10.1063/1.92828
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O59 [应用物理学];
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页码:629 / 630
页数:2
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共 11 条
[1]  
CRANMER RV, UNPUBLISHED
[2]   RESISTANCE OF INFINITE SLAB WITH DISK ELECTRODE [J].
FOXHALL, GF ;
LEWIS, JA .
BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (4P2) :1609-+
[3]   APPLICATION OF SI MBE TO MICROWAVE HYPERABRUPT DIODES [J].
GOODWIN, CA ;
OTA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1796-1799
[4]   CONTROL OF SCHOTTKY-BARRIER HEIGHT BY THIN HIGH-DOPED LAYER [J].
HARIU, T ;
SHIBATA, Y .
PROCEEDINGS OF THE IEEE, 1975, 63 (10) :1523-1524
[5]   SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].
OTA, Y .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1102-1110
[6]  
OTA Y, 1979, J ELECTROCHEM SOC, V126, P1861
[7]  
OTA Y, 1977, TECH DIG INT ELECTRO, P375
[8]  
OTA Y, 1977, J ELECTROCHEM SOC, V124, P1995
[9]   REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].
SHANNON, JM .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :369-371
[10]   INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].
SHANNON, JM .
APPLIED PHYSICS LETTERS, 1974, 25 (01) :75-77