MOSFET SCALING LIMITS DETERMINED BY SUBTHRESHOLD CONDUCTION

被引：26

作者：

PIMBLEY, JM ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1711 / 1721

页数：11

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