KINK EFFECT, TRANSCONDUCTANCE INCREASE AND FIELD ENHANCED ELECTRON-EMISSION IN ALGAAS/GAAS HEMTS

被引：5

作者：

CANALI, C

TEDESCO, C

ZANONI, E

CASTELLANETA, G

MAGISTRALI, F

SANGALLI, M

机构：

[1] CSATA,TECNOPOLIS,I-70010 VALENZANO,ITALY

[2] TELETTRA SPA,I-20159 VIMERCATE,ITALY

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 18期

关键词：

Gallium arsenide; Semiconductor devices and materials;

D O I：

10.1049/el:19900976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results obtained in depletion AIGaAs/GaAs HEMTs showing the presence of a remarkable increase of transconductance with frequency associated with a kink effect in the current-voltage curves is reported. Transconductance increase occurs at high frequencies with increasing drain source voltage. All these effects are ascribed to field enhanced electron emission from deep levels present in the AlGaAs layer. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1520 / 1522

页数：3

共 9 条

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