DUAL MIRROR AND RESONANT-CAVITY OPERATING AT 1.3-MU-M AND 1.55-MU-M

被引:15
作者
MURTAZA, SS
SRINIVASAN, A
SHIH, YC
CAMPBELL, JC
STREETMAN, BG
机构
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
关键词
DISTRIBUTED BRAGG REFLECTOR LASERS; LASER CAVITY RESONATORS;
D O I
10.1049/el:19940429
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A GaAs/AlAs Bragg mirror with two reflectivity bands centred at 1.3 and 1.55 mum is reported. High reflectivity is achieved in both bands and good agreement is observed between measured and simulated reflectivities. A microcavity structure is proposed that is resonant at both wavelengths. Such structures can be used to enhance the absorption or emission of signals at the two wavelengths.
引用
收藏
页码:643 / 645
页数:3
相关论文
共 8 条
[1]   REFRACTIVE-INDEX OF GA1-XALXAS [J].
AFROMOWITZ, MA .
SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63
[2]   DESIGN AND FABRICATION OF ASYMMETRIC STRAINED-LAYER MIRRORS FOR OPTOELECTRONIC APPLICATIONS [J].
BEAN, JC ;
PETICOLAS, LJ ;
HULL, R ;
WINDT, DL ;
KUCHIBHOTLA, R ;
CAMPBELL, JC .
APPLIED PHYSICS LETTERS, 1993, 63 (04) :444-446
[3]   ANALYSIS OF SEMICONDUCTOR MICROCAVITY LASERS USING RATE-EQUATIONS [J].
BJORK, G ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (11) :2386-2396
[4]  
BORN M, 1991, PRINCIPLES OPTICS, P66
[5]   HIGH QUANTUM EFFICIENCY, LONG WAVELENGTH INP/INGAAS MICROCAVITY PHOTODIODE [J].
DENTAI, AG ;
KUCHIBHOTLA, R ;
CAMPBELL, JC ;
TSAI, C ;
LEI, C .
ELECTRONICS LETTERS, 1991, 27 (23) :2125-2127
[6]   LOW-VOLTAGE HIGH-GAIN RESONANT-CAVITY AVALANCHE PHOTODIODE [J].
KUCHIBHOTLA, R ;
SRINIVASAN, A ;
CAMPBELL, JC ;
LEI, C ;
DEPPE, DG ;
HE, YS ;
STREETMAN, BG .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) :354-356
[7]  
LEE CP, 1993, ELECTRON LETT, V29, P22
[8]   HIGH-REFLECTIVITY GESI/SI ASYMMETRIC BRAGG REFLECTOR AT 0.8-MU-M [J].
MURTAZA, S ;
CAMPBELL, J ;
BEAN, JC ;
PETICOLAS, LJ .
ELECTRONICS LETTERS, 1994, 30 (04) :315-316