EVOLUTION OF MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON

被引：90

作者：

MESSIER, R

ROSS, RC

机构：

来源：

关键词：

D O I：

10.1063/1.331536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6220 / 6225

页数：6

共 24 条

[21] MICROSTRUCTURE AND PROPERTIES OF RF-SPUTTERED AMORPHOUS HYDROGENATED SILICON FILMS
ROSS, RC
MESSIER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5329 - 5339
[22] STRUCTURE OF CRACK NETWORK IN AMORPHOUS FILMS
STAUDINGER, A
NAKAHARA, S
[J]. THIN SOLID FILMS, 1977, 45 (01) : 125 - 133
[23] CHARACTERIZATION OF BLACK GE SELECTIVE ABSORBERS
SWAB, P
KRISHNASWAMY, SV
MESSIER, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 362 - 365
[24] HIGH-RATE THICK-FILM GROWTH
THORNTON, JA
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 239 - 260