HYDROGEN PASSIVATION OF SILICON SHEET SOLAR-CELLS

被引：22

作者：

TSUO, YS

MILSTEIN, JB

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：971 / 973

页数：3

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共 10 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON
BENTON, JL
DOHERTY, CJ
FERRIS, SD
FLAMM, DL
KIMERLING, LC
LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671
[2] GIBBONS JF, 1980, HDB SEMICONDUCTORS, V3, P599
[3] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS
HANOKA, JI
SEAGER, CH
SHARP, DJ
PANITZ, JKG
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620
[4] SEMI-CONTINUOUS EDGE-SUPPORTED PULLING OF SILICON SHEETS
HURD, JL
CISZEK, TF
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 499 - 506
[5] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[6] SCHMIDT W, 1982, 16TH P IEEE PHOT SPE, P537
[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES
SEAGER, CH
GINLEY, DS
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055
[8] SINGH R, 1984, 5TH P EUR PHOT SOL E, P1064
[9] ELECTRON CHANNELING AND EBIC STUDIES OF EDGE-SUPPORTED PULLING SILICON SHEETS
TSUO, YS
HURD, JL
MATSON, RJ
CISZEK, TF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) : 614 - 618
[10] TSUO YS, 1984, UNPUB 17TH P IEEE PH