ELECTRONIC QUALITY OF VAPOR-PHASE EPITAXIAL SI GROWN AT REDUCED TEMPERATURE

The electronic quality of vapour phase epitaxial silicon grown at reduced temperatures (less than 850°C) was assessed by a complementary combination of optical and electrical characterization methods. Photoluminescence measurement indicated no deep luminescence centres in the 0.7-1.0 eV photon energy region even in layers grown at 640°C. A comparative ratioing technique was employed to assess the luminescence from the layer and the underlying substrate. Deep level transient spectroscopy showed electrically active traps only in layers grown at below 700°C. Minority carrier lifetime measurement however indicated a reduction in lifetimes in layers grown at 800°C when compared with bulk silicon. Brief comparison was made with results reported for molecular beam epitaxial grown material. © 1990.