NEW APPROACH TO THE KINETICS OF SILICON VAPOR-PHASE EPITAXY AT REDUCED TEMPERATURE

[1] [Anonymous], SEMICONDUCTOR INT

[2] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1691 - 1697

[3] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[4] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[5] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J]. SURFACE SCIENCE, 1972, 30 (02) : 310 - +

[6] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 245 - 258

[7] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[8] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[9] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 797 - 799

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P1

[1] [Anonymous], SEMICONDUCTOR INT

[2] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1691 - 1697

[3] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[4] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[5] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J]. SURFACE SCIENCE, 1972, 30 (02) : 310 - +

[6] ANALYSIS OF SILICON CRYSTAL-GROWTH USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 245 - 258

[7] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[8] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[9] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 797 - 799

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P1