ELECTRONIC CHARGE TRANSPORT IN HIGH-RESISTIVITY SEMICONDUCTORS

被引：11

作者：

HENISCH, HK

MANIFACIER, JC

MOREAU, Y

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 03期

关键词：

D O I：

10.1080/13642818508240609

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：379 / 389

页数：11

共 21 条

[1]

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[4]

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MANIFACIER, JC ;

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[9] THEORY OF MINORITY-CARRIER INJECTION [J].

MANIFACIER, JC ;

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[10] THEORY OF THE HALL-EFFECT IN FINITE SYSTEMS CONTAINING TRAPS [J].

MANIFACIER, JC ;

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