RESONANT TUNNELING VIA LOCALIZED STATES IN THIN MOS STRUCTURES

被引：3

作者：

HARTSTEIN, A

KOCH, RH

机构：

来源：

SURFACE SCIENCE | 1986年 / 170卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(86)90992-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：391 / 396

页数：6

共 9 条

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[3]

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[7]

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[8]

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[9] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

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