POLYCRYSTALLINE SILICON LAYERS FOR SOLAR CELLS

[1] BASSETT GA, 1959, INT C STRUCTURE PROP, P11

[2] LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 522 - &

[3] CHU TL, 1963, METALLURGY ADV ELECT, V19, P209

[4] THIN SILICON FILM GROWTH ON POLYCRYSTALLINE ALUMINA CERAMIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1196 - 1198

[5] FAGIN F, 1970, SOLID STATE ELECTRON, V13, P1125

[6] STRUCTURE OF SILICON FILMS DEPOSITED ON OXIDIZED SILICON WAFERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1569 - &

[7] PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 331 - +

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] SINGLE-CRYSTAL SILICON ON SPINEL [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 734 - +

[10] MANZUR RC, 1966, J ELECTROCHEM SOC, V113, P255

[1] BASSETT GA, 1959, INT C STRUCTURE PROP, P11

[2] LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 522 - &

[3] CHU TL, 1963, METALLURGY ADV ELECT, V19, P209

[4] THIN SILICON FILM GROWTH ON POLYCRYSTALLINE ALUMINA CERAMIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1196 - 1198

[5] FAGIN F, 1970, SOLID STATE ELECTRON, V13, P1125

[6] STRUCTURE OF SILICON FILMS DEPOSITED ON OXIDIZED SILICON WAFERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1569 - &

[7] PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 331 - +

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] SINGLE-CRYSTAL SILICON ON SPINEL [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 734 - +

[10] MANZUR RC, 1966, J ELECTROCHEM SOC, V113, P255