DOPANT REDISTRIBUTION BY PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：9

作者：

HOONHOUT, D

SARIS, FW

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 66卷 / 1-2期

关键词：

D O I：

10.1080/00337578208211473

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：43 / 59

页数：17

共 42 条

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