GROWTH OF GAINAS/INP BY THE VAPOR-PHASE EPITAXY HYDRIDE METHOD

[1] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 19 - &

[2] HYDRIDE MULTIBARREL REACTORS SUITABLE FOR MICROWAVE AND OPTOELECTRONIC (GA,IN)(AS,P) HETEROSTRUCTURE GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 379 - 386

[3] GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (02) : 187 - 194

[4] CADORET R, 1980, CURRENT TOPICS MATER, V5, pCH2

[5] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 641 - 643

[6] DENBAARS BY, 1986, J CRYSTAL GROWTH, V77, P188

[7] ELHANDASSI A, 1986, THESIS U CLERMONT 2

[8] GAUTARD D, 1984, THESIS U CLERMONT 2

[9] GOSNET AM, 1986, THESIS U P M CURIE P

[10] GUEDON C, 1987, THESIS U PARIS 6

[1] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 19 - &

[2] HYDRIDE MULTIBARREL REACTORS SUITABLE FOR MICROWAVE AND OPTOELECTRONIC (GA,IN)(AS,P) HETEROSTRUCTURE GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 379 - 386

[3] GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (02) : 187 - 194

[4] CADORET R, 1980, CURRENT TOPICS MATER, V5, pCH2

[5] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 641 - 643

[6] DENBAARS BY, 1986, J CRYSTAL GROWTH, V77, P188

[7] ELHANDASSI A, 1986, THESIS U CLERMONT 2

[8] GAUTARD D, 1984, THESIS U CLERMONT 2

[9] GOSNET AM, 1986, THESIS U P M CURIE P

[10] GUEDON C, 1987, THESIS U PARIS 6