SELECTIVE ELECTROCHEMICAL ETCHING OF P-CDTE (FOR PHOTO-VOLTAIC CELLS)

被引：26

作者：

TENNE, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.94286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：201 / 203

页数：3

共 25 条

[11] PHOTOACTIVATION OF CDSE FILMS FOR PHOTOELECTROCHEMICAL CELLS [J].

LIU, CHJ ;

OLSEN, J ;

SAUNDERS, DR ;

WANG, JH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1224-1228

[12]

MIROVSKY Y, 1982, ELECTROCHEM SOC P, V82, P517

[13]

MULLER N, 1981, APPL PHYS LETT, V39, P283, DOI 10.1063/1.92673

[14] PHOTOELECTROCHEMICAL ETCHING OF PARA-GAAS [J].

OSTERMAYER, FW ;

KOHL, PA .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :76-78

[15]

SCHWERZEL RE, 3RD C PHOT CONV STOR

[16] ETCH PIT PATTERN OF GAAS CRYSTALS MADE BY LIGHT IRRADIATED ELECTROLYTIC ETCHING [J].

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1741-1746

[17] IMPROVED EFFICIENCY OF CDSE PHOTOANODES BY PHOTOELECTROCHEMICAL ETCHING [J].

TENNE, R ;

HODES, G .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :428-430

[18] THE RELATION BETWEEN PERFORMANCE AND STABILITY OF CD-CHALCOGENIDE POLYSULFIDE PHOTO-ELECTROCHEMICAL CELLS .1. MODEL AND THE EFFECT OF PHOTOETCHING [J].

TENNE, R ;

MULLER, N ;

MIROVSKY, Y ;

LANDO, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :852-860

[19] THE EFFECT OF PHOTOELECTROCHEMICAL ETCHING ON THE PERFORMANCE OF CDS BASED PHOTOELECTROCHEMICAL CELLS [J].

TENNE, R .

APPLIED PHYSICS, 1981, 25 (01) :13-16

[20] TERNARY CHALCOGENIDE-BASED PHOTO-ELECTROCHEMICAL CELLS .2. THE N-CDLN2SE4/AQUEOUS POLYSULFIDE SYSTEM [J].

TENNE, R ;

MIROVSKY, Y ;

GREENSTEIN, Y ;

CAHEN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1506-1512

← 1 2 3 →