INITIAL-STAGES OF EPITAXIAL-GROWTH - GALLIUM-ARSENIDE ON SILICON

被引：23

作者：

ZINKEALLMANG, M

FELDMAN, LC

NAKAHARA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：144 / 146

页数：3

共 17 条

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[3]

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[9] GALLIUM DIFFUSIONS INTO SILICON AND BORON-DOPED SILICON [J].

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[10] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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TSAUR, BY .

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