EXCHANGES BETWEEN SI AND PB ADATOMS ON SI(111)

被引：7

作者：

HIBINO, H

OGINO, T

机构：

[1] NTT Basic Research Laboratories, Atsugi, Kanagawa

来源：

SURFACE SCIENCE | 1995年 / 328卷 / 03期

关键词：

LEAD; LOW INDEX SINGLE CRYSTAL SURFACES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE DIFFUSION;

D O I：

10.1016/0039-6028(95)00231-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Real-time observation by high-temperature scanning tunneling microscopy of exchanges between Si and Pb atoms on a Si(111)-root 3 X root 3 surface is reported. The exchange rate is obtained as a function of the temperature. The activation energy of the exchange is about 1.2 eV, and the prefactor, shown to depend on the Pb coverage, is from 2 X 10(10) to 8 X 10(11) s(-1). This prefactor is much larger than that for the exchange between Pb and Ge adatoms on a Ge(111)-c(2 X 8) surface, indicating that the adatom arrangement greatly influences the exchange mechanism. We also report that metastable 9 x 9 reconstruction appears during Pb desorption.

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收藏

页码：L547 / L552

页数：6

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