ELECTRON-BEAM LITHOGRAPHY FOR THE FABRICATION OF AIR-BRIDGED, SUBMICRON SCHOTTKY COLLECTORS

被引：7

作者：

MULLER, RE ^{[1
]}

MARTIN, SC ^{[1
]}

SMITH, RP ^{[1
]}

ALLEN, SA ^{[1
]}

REDDY, M ^{[1
]}

BHATTACHARYA, U ^{[1
]}

RODWELL, MJW ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3668 / 3672

页数：5

共 11 条

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[6] SUBMICRON MODULATION-DOPED FIELD-EFFECT TRANSISTOR METAL-SEMICONDUCTOR METAL-BASED OPTOELECTRONIC INTEGRATED-CIRCUIT RECEIVER FABRICATED BY DIRECT-WRITE ELECTRON-BEAM LITHOGRAPHY [J].

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[7] ALAS/GAAS SCHOTTKY-COLLECTOR RESONANT-TUNNEL-DIODES [J].

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[8]

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[9] 0.1-MU-M SCHOTTKY-COLLECTOR ALAS/GAAS RESONANT-TUNNELING DIODES [J].

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[10]

SMITH RP, 1992, 3RD P INT S SPAC TER, V40, P839

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