EFFECT OF A SHAPED MAGNETIC-FIELD ON CZOCHRALSKI SILICON GROWTH

被引：34

作者：

SERIES, RW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90251-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：92 / 98

页数：7

共 25 条

[1]

BARRACLOUGH KG, 1986, REDUCED TEMPERATURE, P452

[2]

BARRACLOUGH KG, 1986, SEMICONDUCTOR SILICO, P129

[3] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[4] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE [J].

CARLBERG, T ;

KING, TB ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :189-193

[5] AVOIDANCE OF GROWTH-STRIAE IN SEMICONDUCTOR AND METAL CRYSTALS GROWN BY ZONE-MELTING TECHNIQUES [J].

CHEDZEY, HA ;

HURLE, DTJ .

NATURE, 1966, 210 (5039) :933-&

[6] OXYGEN-TRANSPORT IN MAGNETIC CZOCHRALSKI GROWTH OF SILICON WITH A NON-UNIFORM MAGNETIC-FIELD [J].

HICKS, TW ;

ORGAN, AE ;

RILEY, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (01) :213-228

[7] MELT MOTION IN A CZOCHRALSKI CRYSTAL PULLER WITH AN AXIAL MAGNETIC-FIELD - ISOTHERMAL MOTION [J].

HJELLMING, LN ;

WALKER, JS .

JOURNAL OF FLUID MECHANICS, 1986, 164 :237-273

[8] EFFECTIVE DISTRIBUTION COEFFICIENT IN MAGNETIC CZOCHRALSKI GROWTH [J].

HURLE, DTJ ;

SERIES, RW .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :1-9

[9]

HURLE DTJ, 1976, CRYST GROWTH, P659

[10] THE EFFECT OF A MAGNETIC-FIELD ON THE FLUX OF A CONTAMINANT DISSOLVING INTO THE CRUCIBLE WALL BOUNDARY-LAYER IN CZOCHRALSKI CRYSTAL-GROWTH [J].

KERR, OS ;

WHEELER, AA .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (04) :915-932

← 1 2 3 →