MAGNETIZATION OF BOUND MAGNETIC POLARONS - DIRECT DETERMINATION VIA PHOTOMEMORY EFFECT

被引：53

作者：

WOJTOWICZ, T

KOLESNIK, S

MIOTKOWSKI, I

FURDYNA, JK

机构：

[1] PURDUE UNIV, W LAFAYETTE, IN 47907 USA

[2] UNIV NOTRE DAME, NOTRE DAME, IN 46556 USA

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.70.2317

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Light-induced persistent change in the concentration of occupied shallow donors (photomemory effect) in Cd1-xMnxTe1-ySey:In has been used for determining the contribution of donor-bound magnetic polarons to the total magnetization of the crystal. This contribution must be taken into account in any precise description of low temperature properties of diluted magnetic semiconductors containing shallow donors. The observed agreement between experimental data and the theory of bound magnetic polarons provides additional support for the negative-U model of DX-like centers in II-VI semiconductors.

引用

页码：2317 / 2320

页数：4

共 21 条

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