NEW NATIVE OXIDE OF INP WITH IMPROVED ELECTRICAL INTERFACE PROPERTIES

被引：36

作者：

ROBACH, Y

JOSEPH, J

BERGIGNAT, E

COMMERE, B

HOLLINGER, G

VIKTOROVITCH, P

机构：

[1] ECOLE CENT LYON,ELECTR LAB,CNRS,UNITE 848,F-69131 ECULLY,FRANCE

[2] INST PHYS NUCL LYON,F-69622 VILLEURBANNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1281 / 1283

页数：3

共 5 条

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GOODNICK, SM ;

HWANG, T ;

WILMSEN, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :453-455

[2] ON THE NATURE OF OXIDES ON INP-SURFACES [J].

HOLLINGER, G ;

BERGIGNAT, E ;

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ROBACH, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088

[3] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[4] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[5] INP MISFETS WITH AL2O3 NATIVE OXIDE DOUBLE-LAYER GATE INSULATORS [J].

SAWADA, T ;

ITAGAKI, S ;

HASEGAWA, H ;

OHNO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1038-1043

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