INP MISFETS WITH AL2O3 NATIVE OXIDE DOUBLE-LAYER GATE INSULATORS

被引：39

作者：

SAWADA, T

ITAGAKI, S

HASEGAWA, H

OHNO, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1038 / 1043

页数：6

相关论文

共 26 条

[1] FRITZSCHE D, 1980, I PHYS C SER, V50, P258
[2] GRANT AJ, 1980, I PHYS C SER, V50, P266
[3] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
[4] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT
HASEGAWA, H
SAWADA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061
[5] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES
HASEGAWA, H
SAWADA, T
[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 119 - 140
[6] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR
HIRAYAMA, Y
PARK, HM
KOSHIGA, F
SUGANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 712 - 713
[7] THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
HIROTA, Y
OKAMURA, M
KOBAYASHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 536 - 540
[8] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS
ITOH, T
OHATA, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815
[9] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN
KAWAKAMI, T
OKAMURA, M
[J]. ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504
[10] INVERSION-MODE INP MISFET EMPLOYING PHOSPHORUS-NITRIDE GATE INSULATOR
KOBAYASHI, T
HIROTA, Y
[J]. ELECTRONICS LETTERS, 1982, 18 (04) : 180 - 181