INVERSION-MODE INP MISFET EMPLOYING PHOSPHORUS-NITRIDE GATE INSULATOR

被引：17

作者：

KOBAYASHI, T

HIROTA, Y

机构：

来源：

关键词：

D O I：

10.1049/el:19820124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：180 / 181

页数：2

共 18 条

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[2] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND
FRITZSCHE, D
[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52
[3] FRITZSCHE D, 1979, C INSULATING FILMS S
[4] HIROTA Y, UNPUB J APPL PHYS
[5] HIROTA Y, 1982, UNPUB J APPL PHYS, V53
[6] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
KOBAYASHI, T
OKAMURA, M
YAMAGUCHI, E
SHINODA, Y
HIROTA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6434 - 6436
[7] CHARACTERIZATION OF IMPROVED INSB INTERFACES
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VISWANATHAN, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1474 - 1477
[8] N-CHANNEL INVERSION-MODE INP MISFET
LILE, DL
COLLINS, DA
MEINERS, LG
MESSICK, L
[J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659
[9] AN INP MIS DIODE
LILE, DL
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 554 - 556
[10] INP-SIO2 MIS STRUCTURE
MESSICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4949 - 4951