FAST DIFFUSION OF AS IN POLYCRYSTALLINE SILICON DURING RAPID THERMAL ANNEALING

被引：14

作者：

WILSON, SR ^{[1
]}

PAULSON, WM ^{[1
]}

GREGORY, RB ^{[1
]}

GRESSETT, JD ^{[1
]}

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：464 / 466

页数：3

共 10 条

[1]

Baumgart H., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P349

[2]

Baumgart H., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P311

[3]

Hodgson R. T., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P355

[4]

KRAUSE S, UNPUB

[5]

SHEWMON PG, 1963, DIFFUSION SOLIDS, P31

[6] DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON [J].

SWAMINATHAN, B ;

SARASWAT, KC ;

DUTTON, RW ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :795-798

[7] RAPID ISOTHERMAL ANNEAL OF AS-75 IMPLANTED SILICON [J].

WILSON, SR ;

GREGORY, RB ;

PAULSON, WM ;

HAMDI, AH ;

MCDANIEL, FD .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :978-980

[8] RAPID ISOTHERMAL ANNEALING OF AS-IMPLANTED, P-IMPLANTED, AND B-IMPLANTED SILICON [J].

WILSON, SR ;

PAULSON, WM ;

GREGORY, RB ;

HAMDI, AH ;

MCDANIEL, FD .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4162-4170

[9]

WILSON SR, 1983, LASER SOLID INTERACT, P349

[10]

Wilson Z. E., UNPUB

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