RAPID ISOTHERMAL ANNEAL OF AS-75 IMPLANTED SILICON

被引：23

作者：

WILSON, SR ^{[1
]}

GREGORY, RB ^{[1
]}

PAULSON, WM ^{[1
]}

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：978 / 980

页数：3

共 11 条

[1]

FERRIS SD, 1979, LASER SOLID INTERACT

[2] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[3]

Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[4] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

YEP, TO ;

FULKS, RT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :150-152

[5]

Shah N. J., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P201

[6] SHALLOW JUNCTIONS BY HIGH-DOSE AS IMPLANTS IN SI - EXPERIMENTS AND MODELING [J].

TSAI, MY ;

MOREHEAD, FF ;

BAGLIN, JEE ;

MICHEL, AE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3230-3235

[7] TRANSIENT ANNEALING OF ARSENIC-IMPLANTED SILICON USING A GRAPHITE STRIP HEATER [J].

TSAUR, BY ;

DONNELLY, JP ;

FAN, JCC ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :93-95

[8]

WHITE CW, 1980, LASER ELECTRON BEAM

[9]

Wilson S. R., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P287

[10] SCANNED ELECTRON-BEAM ANNEALING OF BORON-IMPLANTED DIODES [J].

YEP, TO ;

FULKS, RT ;

POWELL, RA .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :162-164

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