SCANNED ELECTRON-BEAM ANNEALING OF BORON-IMPLANTED DIODES

被引：17

作者：

YEP, TO

FULKS, RT

POWELL, RA

机构：

[1] EXTRION DIV,GLOUCESTER,MA 01930

[2] VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期

关键词：

D O I：

10.1063/1.92287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：162 / 164

页数：3

共 11 条

[1] MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

BENTINI, GG ;

GALLONI, R ;

NIPOTI, R .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663

[2] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[3] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J].

KAMINS, TI ;

ROSE, PH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1308-1311

[4] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

ELECTRONICS LETTERS, 1980, 16 (08) :295-297

[5] DIRECT DEVICE FABRICATION BY SELECTED AREA E-BEAM ANNEALING [J].

MCMAHON, RA ;

AHMED, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1840-1842

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[7] SCANNING-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED P-N-JUNCTION DIODES [J].

MCMAHON, RA ;

AHMED, H ;

SPEIGHT, JD ;

DOBSON, RM .

ELECTRONICS LETTERS, 1979, 15 (14) :433-435

[8]

MCMAHON RA, 1979, 1979 P EL SOC LOS AN, V79, P1321

[9] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J].

MICHEL, AE ;

FANG, FF ;

PAN, ES .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :2991-2996

[10]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

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