VALENCE-BAND ELECTRONIC-STRUCTURE OF SILICON-NITRIDE STUDIED WITH THE USE OF SOFT-X-RAY EMISSION

被引：67

作者：

CARSON, RD

SCHNATTERLY, SE

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2432 / 2438

页数：7

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