A MODEL OF AVALANCHE PHOTODIODE

[1] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[2] FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 297 - +

[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[5] JOHNSON KM, 1964, FEB INT SOL STAT CIR, V7, P64

[6] KRUSE PW, 1962, ELEMENTS INFRARED TE, P269

[7] LOFERSKI JJ, 1961, RCA REV, V22, P38

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +

[9] MELCHOIR H, 1965, OCT INT EL DEV M WAS

[10] BEHAVIOR OF NOISE FIGURE IN JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (07): : 957 - 963

[1] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[2] FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 297 - +

[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[5] JOHNSON KM, 1964, FEB INT SOL STAT CIR, V7, P64

[6] KRUSE PW, 1962, ELEMENTS INFRARED TE, P269

[7] LOFERSKI JJ, 1961, RCA REV, V22, P38

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +

[9] MELCHOIR H, 1965, OCT INT EL DEV M WAS

[10] BEHAVIOR OF NOISE FIGURE IN JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (07): : 957 - 963