HEAVILY CARBON DOPED PARA-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：111

作者：

YAMADA, T

TOKUMITSU, E

SAITO, K

AKATSUKA, T

MIYAUCHI, M

KONAGAI, M

TAKAHASHI, K

机构：

[1] Tokyo Inst of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

8;

D O I：

10.1016/0022-0248(89)90369-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：145 / 149

页数：5

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