STRUCTURE AND PROPERTIES OF REFRACTORY COMPOUNDS DEPOSITED BY DIRECT EVAPORATION

[1] AUWARTER M, 1960, Patent No. 2920002

[2] ACTIVATED REACTIVE EVAPORATION PROCESS FOR HIGH RATE DEPOSITION OF COMPOUNDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06): : 1385 - &

[3] BUNSHAH RF, 1975, RES DEV, V26, P46

[4] GLASER FW, 1953, T AM I MIN MET ENG, V197, P1117

[5] EFFECT OF SUBSTRATE POTENTIAL ON AL2O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 326 - &

[6] Movchan B. A., 1969, Fizika Metallov i Metallovedenie, V28, P653

[7] MOVCHAN BA, 1975, COMMUNICATION

[8] NAKAMURA K, 1975, KINZOKU AUG

[9] STRUCTURE AND MICROHARDNESS RELATIONSHIPS IN TI, ZR AND HF-3ZR CARBIDE DEPOSITS SYNTHESIZED BY ACTIVATED REACTIVE EVAPORATION [J]. THIN SOLID FILMS, 1974, 20 (01) : 187 - 199

[10] RUPPERT W, 1960, Patent No. 2962388

[1] AUWARTER M, 1960, Patent No. 2920002

[2] ACTIVATED REACTIVE EVAPORATION PROCESS FOR HIGH RATE DEPOSITION OF COMPOUNDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06): : 1385 - &

[3] BUNSHAH RF, 1975, RES DEV, V26, P46

[4] GLASER FW, 1953, T AM I MIN MET ENG, V197, P1117

[5] EFFECT OF SUBSTRATE POTENTIAL ON AL2O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 326 - &

[6] Movchan B. A., 1969, Fizika Metallov i Metallovedenie, V28, P653

[7] MOVCHAN BA, 1975, COMMUNICATION

[8] NAKAMURA K, 1975, KINZOKU AUG

[9] STRUCTURE AND MICROHARDNESS RELATIONSHIPS IN TI, ZR AND HF-3ZR CARBIDE DEPOSITS SYNTHESIZED BY ACTIVATED REACTIVE EVAPORATION [J]. THIN SOLID FILMS, 1974, 20 (01) : 187 - 199

[10] RUPPERT W, 1960, Patent No. 2962388