ZN DIFFUSION IN INP - EFFECT OF SUBSTRATE DOPANT CONCENTRATION

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) : 443 - +

[2] FABRICATION OF LOW DARK-CURRENT PLANAR PHOTODIODES USING AN OPEN-TUBE METHOD FOR ZN DIFFUSION INTO INP AND IN0.53GA0.47AS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) : 1687 - 1688

[3] SELECTIVE AREA LPE GROWTH AND OPEN TUBE DIFFUSION IN INGAAS/INP [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) : 9 - 24

[4] GHANDHI SK, 1983, VLSI FABRICATION PRI, P111

[5] DOUBLE ZINC DIFFUSION FRONTS IN INP - CORRELATION WITH MODELS OF VARYING CHARGE-TRANSFER DURING INTERSTITIAL-SUBSTITUTIONAL INTERCHANGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02): : 239 - 242

[6] THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05): : 628 - 633

[7] ZN DIFFUSION IN GAAS UNDER CONSTANT AS PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 249 - 254

[8] DIFFUSION OF CD AND ZN INTO INP AND INGAASP (EG=0.95-1.35EV) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (11): : 1699 - 1704

[9] AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V-COMPOUNDS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 132 - 134

[10] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J]. PHYSICAL REVIEW, 1963, 131 (04): : 1548 - &

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) : 443 - +

[2] FABRICATION OF LOW DARK-CURRENT PLANAR PHOTODIODES USING AN OPEN-TUBE METHOD FOR ZN DIFFUSION INTO INP AND IN0.53GA0.47AS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) : 1687 - 1688

[3] SELECTIVE AREA LPE GROWTH AND OPEN TUBE DIFFUSION IN INGAAS/INP [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) : 9 - 24

[4] GHANDHI SK, 1983, VLSI FABRICATION PRI, P111

[5] DOUBLE ZINC DIFFUSION FRONTS IN INP - CORRELATION WITH MODELS OF VARYING CHARGE-TRANSFER DURING INTERSTITIAL-SUBSTITUTIONAL INTERCHANGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02): : 239 - 242

[6] THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05): : 628 - 633

[7] ZN DIFFUSION IN GAAS UNDER CONSTANT AS PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 249 - 254

[8] DIFFUSION OF CD AND ZN INTO INP AND INGAASP (EG=0.95-1.35EV) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (11): : 1699 - 1704

[9] AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V-COMPOUNDS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 132 - 134

[10] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J]. PHYSICAL REVIEW, 1963, 131 (04): : 1548 - &