DIFFUSION OF CD AND ZN INTO INP AND INGAASP (EG=0.95-1.35EV)

被引：21

作者：

MATSUMOTO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 11期

关键词：

D O I：

10.1143/JJAP.22.1699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1699 / 1704

页数：6

共 16 条

[1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP [J].

ANDO, H ;

SUSA, N ;

KANBE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L197-L200

[2] SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE [J].

AYTAC, S ;

SCHLACHETZKI, A .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :57-&

[3]

CHIN PK, 1979, APPL PHYS LETT, V36, P924

[4] LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].

ISHIDA, K ;

KAMEJIMA, T ;

MATSUMOTO, Y ;

ENDO, K .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :16-17

[5] SOME THERMODYNAMIC PROPERTIES OF ZN3AS2, CD3AS2, AND ZNP2 [J].

JORDAN, AS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1362-&

[6] HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG ;

BALLMAN, AA ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :511-513

[7]

MATSUMOTO Y, 1983, JPN J APPL PHYS, V22, P827

[8] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

NISHIDA, K ;

TAGUCHI, K ;

MATSUMOTO, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[9]

NYGREN SF, 1969, J ELECTROCHEM SOC, V116, P643

[10] PLANAR ZN DIFFUSION IN INP [J].

REZEK, EA ;

WRIGHT, PD ;

HOLONYAK, N .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :325-329

← 1 2 →