STUDY OF ELECTRONIC LEVELS IN ANTIMONY AND INDIUM-DOPED GALLIUM-ARSENIDE

被引：34

作者：

MITCHEL, WC ^{[1
]}

YU, PW ^{[1
]}

机构：

[1] WRIGHT STATE UNIV, RES CTR, DAYTON, OH 45435 USA

来源：

关键词：

D O I：

10.1063/1.334751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：623 / 625

页数：3

共 16 条

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