DEFECT NATURE OF THE 0.4-EV CENTER IN O-DOPED GAAS

被引：20

作者：

LOOK, DC ^{[1
]}

CHAUDHURI, S ^{[1
]}

SIZELOVE, JR ^{[1
]}

机构：

[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.94109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：829 / 831

页数：3

共 19 条

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[3]

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[6]

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[7] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-O [J].

LIN, AL ;

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BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1852-1858

[8] A DOMINANT ELECTRICAL DEFECT IN GAAS [J].

LOOK, DC ;

WALTERS, DC ;

MEYER, JR .

SOLID STATE COMMUNICATIONS, 1982, 42 (10) :745-748

[9] STATISTICS OF MULTICHARGE CENTERS IN SEMICONDUCTORS - APPLICATIONS [J].

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[10] AUTOMATED, HIGH-RESISTIVITY HALL-EFFECT AND PHOTOELECTRONIC APPARATUS [J].

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FARMER, JW .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04) :472-477

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