DYNAMIC SPECTRAL WIDTH OF AN INGAASP INP ELECTROABSORPTION LIGHT-MODULATOR UNDER HIGH-FREQUENCY LARGE-SIGNAL MODULATION

被引：30

作者：

SUZUKI, M

NODA, Y

KUSHIRO, Y

AKIBA, S

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 06期

关键词：

D O I：

10.1049/el:19860214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：312 / 313

页数：2

相关论文

共 9 条

[1] AKIBA S, 1983, IEEE J QUANTUM ELECT, V19, P1052, DOI 10.1109/JQE.1983.1071962
[2] BURIED HETEROJUNCTION ELECTROABSORPTION MODULATOR
CAMPBELL, JC
DEWINTER, JC
POLLACK, MA
NAHORY, RE
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 471 - 473
[3] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
HENRY, CH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) : 259 - 264
[4] NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS
KOCH, TL
BOWERS, JE
[J]. ELECTRONICS LETTERS, 1984, 20 (25-2) : 1038 - 1040
[5] FREQUENCY CHIRPING OF EXTERNAL MODULATION AND ITS REDUCTION
KOYAMA, F
IGA, K
[J]. ELECTRONICS LETTERS, 1985, 21 (23) : 1065 - 1066
[6] HIGH-SENSITIVITY OF VPE-GROWN INGAAS/INP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE
MATSUSHIMA, Y
NODA, Y
KUSHIRO, Y
SEKI, N
AKIBA, S
[J]. ELECTRONICS LETTERS, 1984, 20 (06) : 235 - 236
[7] 1.6 GHZ ELECTROABSORPTION LIGHT-MODULATION IN INGAASP/INP DOUBLE HETEROSTRUCTURES WITH STRIP-LOADED PLANAR WAVE-GUIDE
NODA, Y
SUZUKI, M
KUSHIRO, Y
AKIBA, S
[J]. ELECTRONICS LETTERS, 1985, 21 (25-2) : 1182 - 1183
[8] MEASUREMENT OF LINEWIDTH BROADENING FACTOR IN GAIN-SWITCHED INGAASP INJECTION-LASERS BY CHP METHOD
OSINSKI, M
GALLAGHER, DFG
WHITE, IH
[J]. ELECTRONICS LETTERS, 1985, 21 (21) : 981 - 982
[9] SERAPHIN BO, 1965, PHYS REV A, V139, P560