THE INFLUENCE OF GAS-PHASE ETCH REMOVAL, DEPOSITION TEMPERATURE AND SUBSTRATE PROPERTIES ON THE CRYSTALLOGRAPHIC PERFECTION OF SILICON EPITAXIAL LAYERS

被引：2

作者：

RICHTER, F ^{[1
]}

WEIDNER, G ^{[1
]}

BORCHARDT, A ^{[1
]}

BUGIEL, E ^{[1
]}

KITTLER, M ^{[1
]}

SCHMALZ, K ^{[1
]}

WEIDNER, M ^{[1
]}

RAUSCH, H ^{[1
]}

机构：

[1] ACAD SCI GDR, INST PHYS WERKSTOFFBEARBEITUNG, DDR-1080 BERLIN, GER DEM REP

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 12期

关键词：

D O I：

10.1002/crat.2170181216

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1521 / 1531

页数：11

共 18 条

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