THEORY OF HYDROGEN DIFFUSION AND REACTIONS IN CRYSTALLINE SILICON

被引：529

作者：

VAN DE WALLE, CG ^{[1
]}

DENTENEER, PJH ^{[1
]}

BARYAM, Y ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, DIV RES, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.10791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10791 / 10808

页数：18

共 79 条

[1] WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE [J].

ALTARELLI, M ;

HSU, WY .

PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1346-1349

[2] MEAN-VALUE POINT IN BRILLOUIN ZONE [J].

BALDERESCHI, A .

PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[4] BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON [J].

BARANOWSKI, JM ;

TATARKIEWICZ, J .

PHYSICAL REVIEW B, 1987, 35 (14) :7450-7453

[5] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852

[6]

BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[7]

BEELER F, 1986, THESIS U STUTTGART

[8] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].

BERGMAN, K ;

STAVOLA, M ;

PEARTON, SJ ;

LOPATA, J .

PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773

[9]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[10] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

← 1 2 3 4 5 6 7 8 →