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FERMI-LEVEL-PINNING-INDUCED IMPURITY REDISTRIBUTION IN SEMICONDUCTORS DURING EPITAXIAL-GROWTH
被引:47
作者
:
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
SCHUBERT, EF
KUO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
KUO, JM
KOPF, RF
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
KOPF, RF
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
JORDAN, AS
LUFTMAN, HS
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
LUFTMAN, HS
HOPKINS, LC
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill, NJ 07974
HOPKINS, LC
机构
:
[1]
AT and T Bell Laboratories, Murray Hill, NJ 07974
来源
:
PHYSICAL REVIEW B
|
1990年
/ 42卷
/ 02期
关键词
:
D O I
:
10.1103/PhysRevB.42.1364
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
The influence of Fermi-level pinning at a semiconductor surface on dopant distribution is demonstrated. It is shown that surface-induced Fermi-level-pinning results in impurity drift during crystal growth by molecular-beam epitaxy. The surface electric field can be screened and reversed by appropriate background doping. Secondary-ion mass spectroscopy measurements indicate a drastic decrease of Si surface drift in AlxGa1-xAs upon screening of the dipole interaction. Reversal of the surface electric field results in a migration of Be impurities in GaAs away from the surface toward the substrate during epitaxial growth. © 1990 The American Physical Society.
引用
收藏
页码:1364 / 1368
页数:5
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(11)
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[22]
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[J].
SPICER, WE
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:2411
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[J].
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←
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→