FERMI-LEVEL-PINNING-INDUCED IMPURITY REDISTRIBUTION IN SEMICONDUCTORS DURING EPITAXIAL-GROWTH

被引:47
作者
SCHUBERT, EF
KUO, JM
KOPF, RF
JORDAN, AS
LUFTMAN, HS
HOPKINS, LC
机构
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 02期
关键词
D O I
10.1103/PhysRevB.42.1364
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of Fermi-level pinning at a semiconductor surface on dopant distribution is demonstrated. It is shown that surface-induced Fermi-level-pinning results in impurity drift during crystal growth by molecular-beam epitaxy. The surface electric field can be screened and reversed by appropriate background doping. Secondary-ion mass spectroscopy measurements indicate a drastic decrease of Si surface drift in AlxGa1-xAs upon screening of the dipole interaction. Reversal of the surface electric field results in a migration of Be impurities in GaAs away from the surface toward the substrate during epitaxial growth. © 1990 The American Physical Society.
引用
收藏
页码:1364 / 1368
页数:5
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