ACCEPTOR-LIKE EXCITED-STATES OF THE ISOELECTRONIC A,B,C EXCITON SYSTEM IN SILICON

[11] EVEN-PARITY ACCEPTOR EXCITED-STATES IN SI FROM BOUND EXCITON 2 HOLE TRANSITIONS [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (10) : 733 - 735

[12] ISOELECTRONIC BOUND EXCITONS IN SILICON - THE ROLE OF DEEP ACCEPTORS [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3655 - 3658

[13] ENHANCEMENT OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI - IN [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (01) : 27 - 30

[14] EXCITATION SPECTROSCOPY ON THE P, Q, R ISOELECTRONIC LINES IN INDIUM DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (12) : 1273 - 1276

[15] EXCITONS BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 93 - 96

[16] LOCALIZED EXCITON BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2401 - 2414

[17] WIESNER PJ, 1975, PHYS REV LETT, V35, P1366, DOI 10.1103/PhysRevLett.35.1366

[11] EVEN-PARITY ACCEPTOR EXCITED-STATES IN SI FROM BOUND EXCITON 2 HOLE TRANSITIONS [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (10) : 733 - 735

[12] ISOELECTRONIC BOUND EXCITONS IN SILICON - THE ROLE OF DEEP ACCEPTORS [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3655 - 3658

[13] ENHANCEMENT OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI - IN [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (01) : 27 - 30

[14] EXCITATION SPECTROSCOPY ON THE P, Q, R ISOELECTRONIC LINES IN INDIUM DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (12) : 1273 - 1276

[15] EXCITONS BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 93 - 96

[16] LOCALIZED EXCITON BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2401 - 2414

[17] WIESNER PJ, 1975, PHYS REV LETT, V35, P1366, DOI 10.1103/PhysRevLett.35.1366