ISOELECTRONIC BOUND EXCITONS IN SILICON - THE ROLE OF DEEP ACCEPTORS

被引：21

作者：

THEWALT, MLW ^{[1
]}

ZIEMELIS, UO ^{[1
]}

PARSONS, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 2A6,BC,CANADA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3655 / 3658

页数：4

相关论文

共 9 条

[1] EVIDENCE FOR THE EXISTENCE OF A COMPLEX ISOELECTRONIC CENTER IN SI-IN
BROWN, DH
SMITH, SR
[J]. JOURNAL OF LUMINESCENCE, 1980, 21 (04) : 329 - 336
[2] ABSORPTION AND LUMINESCENCE OF BOUND EXCITON IN THALLIUM DOPED SILICON
ELLIOTT, KR
SMITH, DL
MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (03) : 317 - 320
[3] DETERMINATION OF RELATIVE IMPURITY CONCENTRATIONS USING PHOTO-LUMINESCENCE - A CASE-STUDY OF THE SI-(B, IN) SYSTEM
MITCHARD, GS
MCGILL, TC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 959 - 961
[4] OBSERVATION OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI-IN
MITCHARD, GS
LYON, SA
ELLIOTT, KR
MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (05) : 425 - 429
[5] STAHLBUSH RE, 1981, B AM PHYS SOC, V26, P456
[6] THEWALT MLW, SOLID STATE COMMUN
[7] HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL
VOUK, MA
LIGHTOWLERS, EC
[J]. JOURNAL OF LUMINESCENCE, 1977, 15 (04) : 357 - 384
[8] EXCITONS BOUND TO AN ISOELECTRONIC TRAP IN SILICON
WEBER, J
SCHMID, W
SAUER, R
[J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 93 - 96
[9] LOCALIZED EXCITON BOUND TO AN ISOELECTRONIC TRAP IN SILICON
WEBER, J
SCHMID, W
SAUER, R
[J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2401 - 2414